CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M

被引：98

作者：

ANDO, H ^{[1
]}

KANBE, H ^{[1
]}

KIMURA, T ^{[1
]}

YAMAOKA, T ^{[1
]}

KANEDA, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD, KANAGAWA, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1978年 / 14卷 / 11期

关键词：

D O I：

10.1109/JQE.1978.1069698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：804 / 809

页数：6

共 15 条

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