MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES

被引：1235

作者：

MCINTYRE, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：164 / +

页数：1

相关论文

共 11 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN
BATDORF, RL
CHYNOWETH, AG
DACEY, GC
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160
[3] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
SCARLETT, RM
HAITZ, RH
MCDONALD, B
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +
[4] NOISE THEORY FOR READ TYPE AVALANCHE DIODE
HINES, ME
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 158 - &
[5] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE
JOHNSON, KM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) : 55 - +
[6] A SILICON DIODE MICROWAVE OSCILLATOR
JOHNSTON, RL
DELOACH, BC
COHEN, BG
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02): : 369 - +
[7] TECHNOLOGICAL DEVELOPMENTS EVOLVING FROM RESEARCH ON READ DIODES
LEE, CA
BATDORF, RL
WIEGMANN, W
KAMINSKY, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 175 - +
[8] AN AVALANCHING SILICON DIODE MICROWAVE AMPLIFIER
NAPOLI, LS
IKOLA, RJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1231 - &
[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446
[10] TAGER AS, 1965, FIZ TVERD TELA+, V6, P1919