HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE

被引:66
作者
JOHNSON, KM
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D O I
10.1109/T-ED.1965.15453
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:55 / +
页数:1
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共 18 条
[1]  
ANDERSON LK, 1964, FEB INT SOL STAT CIR, V7, P60
[2]   MICROPLASMA FLUCTUATIONS IN SILICON [J].
CHAMPLIN, KS .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1039-1050
[3]   A MICROWAVE FREQUENCY DYNAMIC CROSSED-FIELD PHOTOMULTIPLIER [J].
GADDY, OL ;
HOLSHOUSER, DF .
PROCEEDINGS OF THE IEEE, 1963, 51 (01) :153-&
[4]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[5]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[6]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].
HAITZ, RH ;
GOETZBERGER, A ;
SCARLETT, RM ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&
[7]   AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS [J].
HAITZ, RH ;
GOETZBERGER, A .
SOLID-STATE ELECTRONICS, 1963, 6 (06) :678-&
[8]  
HARRIS SE, 1963, IRE PGEP, VED9, P322
[10]  
JOHNSON KM, 1963, MICROWAVE J, V6, P71