AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS

被引：22

作者：

HAITZ, RH

GOETZBERGER, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 06期

关键词：

D O I：

10.1016/0038-1101(63)90067-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：678 / &

相关论文

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[2] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
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[4] HAITZ RH, 1962, B AM PHYS SOC, V7, P536
[5] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .2. CLASSIFICATION OF WEAK SPOTS IN DIFFUSED P-N JUNCTIONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 983 - &
[8] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON
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