THEORY OF MICROPLASMA INSTABILITY IN SILICON

被引：173

作者：

MCINTYRE, RJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 06期

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D O I：

10.1063/1.1736199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：983 / &

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[1] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN
BATDORF, RL
CHYNOWETH, AG
DACEY, GC
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160
[2] STATISTICAL THEORY OF AVALANCHE BREAKDOWN IN SILICON
BURGESS, RE
[J]. CANADIAN JOURNAL OF PHYSICS, 1959, 37 (06) : 730 - 738
[3] MICROPLASMA FLUCTUATIONS IN SILICON
CHAMPLIN, KS
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1039 - 1050
[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[5] CHYNOWETH AG, PRIV COMMUNICATIONS
[6] DREWS RE, 1957, DISSERTATION
[7] FELLER W, 1957, INTRO PROBABILITY IT, V1, P66
[8] GOETZBERGER A, 1959, B AM PHYS SOC, V4, P409
[9] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .2. CLASSIFICATION OF WEAK SPOTS IN DIFFUSED P-N JUNCTIONS
KIKUCHI, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (10) : 1822 - 1831
[10] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1.
KIKUCHI, M
TACHIKAWA, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) : 835 - 848