STATISTICAL THEORY OF AVALANCHE BREAKDOWN IN SILICON

[1] THE STATISTICS OF CHARGE CARRIER FLUCTUATIONS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1020 - 1027

[2] ELECTRONIC FLUCTUATIONS IN SEMICONDUCTORS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (06): : 185 - 190

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[4] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[5] DREWS RE, 1957, THESIS U BRIT COLUMB

[6] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[7] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703

[1] THE STATISTICS OF CHARGE CARRIER FLUCTUATIONS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10): : 1020 - 1027

[2] ELECTRONIC FLUCTUATIONS IN SEMICONDUCTORS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (06): : 185 - 190

[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[4] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540

[5] DREWS RE, 1957, THESIS U BRIT COLUMB

[6] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[7] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703