NOISE THEORY FOR READ TYPE AVALANCHE DIODE

被引：78

作者：

HINES, ME

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：158 / &

共 7 条

[1] DELOACH BC, 1966, IEEE T ELECTRON DEV, VED13, P181
[2] HINES ME, 1966, IEEE T ELECTRON DEV, VED13, P169
[3] A SILICON DIODE MICROWAVE OSCILLATOR
JOHNSTON, RL
DELOACH, BC
COHEN, BG
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02): : 369 - +
[4] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T)
LEE, CA
BATDORF, RL
WIEGMANN, W
KAMINSKY, G
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &
[5] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446
[6] TAGER AS, 1965, FIZ TVERD TELA+, V6, P1919
[7] TAGER AS, 1964, FIZ TVERD TELA, V6, P2418