READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T)

被引：46

作者：

LEE, CA

BATDORF, RL

WIEGMANN, W

KAMINSKY, G

机构：

来源：

关键词：

D O I：

10.1063/1.1754180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：89 / &

相关论文

共 4 条

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BATDORF, RL
SMITS, FM
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[2] JOHNSTON RB, IN PRESS
[3] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[4] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE
READ, WT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446