INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN

被引：181

作者：

NISHIDA, K

TAGUCHI, K

MATSUMOTO, Y

机构：

[1] Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsuku, Kawasaki

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Distinct improvements in avalanche-gain and dark-current characteristics have been made in InGaAsP heterostructure APD's. A planar-type p-n junction is formed in an InP window layer, separated from a light-absorbing InGaAsP layer. This APD structure has yielded an avalanche gain of 3000 and a dark-current density as low a 1 μA/cm2 at 0.5 Vb.

引用

页码：251 / 253

页数：3

共 9 条

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[6] LEE TP, 1978, TECH DIG INT ELECTRO, P112
[7] MATSUMOTO Y, UNPUBLISHED
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[9] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
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