1.0-1.4-MU-M HIGH-SPEED AVALANCHE PHOTO-DIODES

[1] ANDERSON SJ, 1977, 33B I PHYS C SER, P346

[2] INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 651 - &

[3] BARNES CE, 1977, SAND760726 SAND LAB

[4] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] GAINASP-INP AVALANCHE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 487 - 489

[7] NIIZEKI N, 1978, TOPICAL M INTEGRATED

[8] PEARSALL TP, 1978, TOPICAL M INTEGRATED

[9] 1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 353 - 354

[10] SCHOTTKY-BARRIER IN XGA1-X AS ALLOY AVALANCHE PHOTODIODES FOR 1.06 MUM [J]. APPLIED PHYSICS LETTERS, 1974, 24 (01) : 8 - 10

[1] ANDERSON SJ, 1977, 33B I PHYS C SER, P346

[2] INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 651 - &

[3] BARNES CE, 1977, SAND760726 SAND LAB

[4] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] GAINASP-INP AVALANCHE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 487 - 489

[7] NIIZEKI N, 1978, TOPICAL M INTEGRATED

[8] PEARSALL TP, 1978, TOPICAL M INTEGRATED

[9] 1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 353 - 354

[10] SCHOTTKY-BARRIER IN XGA1-X AS ALLOY AVALANCHE PHOTODIODES FOR 1.06 MUM [J]. APPLIED PHYSICS LETTERS, 1974, 24 (01) : 8 - 10