INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS

被引：17

作者：

BAKOWSKI, M ^{[1
]}

HANSSON, B ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,S-40220 GOTHENBURG 5,SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 7-8期

关键词：

D O I：

10.1016/0038-1101(75)90136-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：651 / &

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 347 - 352
[4] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS
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