DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS

被引：37

作者：

BAKOWSKI, M ^{[1
]}

LUNDSTROM, KI ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN

来源：

关键词：

D O I：

10.1109/T-ED.1973.17697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：550 / 563

页数：14

共 18 条

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[2] BAKOWSKI M, TO BE PUBLISHED
[3] BAKOWSKI M, LIGHT PROBE MEASUREM
[4] BRADLEY R, 1969, 53 I EL ENG C PUBL
[5] CLARK OM, 1966, Patent No. 3260634
[6] ELECTRIC-FIELDS AT AND NEAR SURFACE OF P-N-JUNCTIONS WITH NEGATIVE BEVEL ANGLES
CORNU, J
[J]. ELECTRONICS LETTERS, 1972, 8 (07) : 169 - +
[7] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS
DAVIES, RL
GENTRY, FE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 313 - +
[8] GARRETT CGB, 1956, J APPL PHYS, V27
[9] MAXIMUM BLOCKING CAPABILITY OF SILICON THYRISTORS
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 655 - &
[10] HUTH GC, 1882, Patent No. 255037