ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE

[1] Anderson S. J., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and related compounds, P346

[2] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3003 - 3009

[3] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+ [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221

[4] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[5] UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 706 - 708

[6] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[9] Hsieh J. J., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and related compounds, P37

[10] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[1] Anderson S. J., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and related compounds, P346

[2] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3003 - 3009

[3] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+ [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221

[4] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 418 - 420

[5] UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 706 - 708

[6] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[9] Hsieh J. J., 1977, Proceedings of the 6th International Symposium on Gallium Arsenide and related compounds, P37

[10] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711