ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA

被引：87

作者：

DONNELLY, JP ^{[1
]}

HURWITZ, CE ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 07期

关键词：

D O I：

10.1063/1.89730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：418 / 420

页数：3

共 10 条

[1]

Baliga B. J., 1973, 1973 International Electron Devices Meeting Technical Digest, P256, DOI 10.1109/IEDM.1973.188701

[2]

BECKER R, 1973, SOLID STATE ELECTRON, V16, P124

[3] HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES [J].

BOZLER, CO ;

DONNELLY, JP ;

MURPHY, RA ;

LATON, RW ;

SUDBURY, RW ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :123-125

[4] LOW-RESISTIVITY N-TYPE LAYERS IN INASXP1-X BY ION-IMPLANTATION [J].

DAVIES, DE ;

KENNEDY, JK ;

LOWE, LF .

ELECTRONICS LETTERS, 1975, 11 (19) :462-463

[5] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[6] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J].

DONNELLY, JP ;

BOZLER, CO ;

LINDLEY, WT .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :273-276

[7]

DONNELLY JP, 1977, 1976 P N AM S GAAS R, P166

[8] MICROWAVE FIELD-EFFECT TRANSISTORS FROM SULFUR-IMPLANTED GAAS [J].

KELLNER, W ;

KNIEPKAMP, H ;

RISTOW, D ;

HEINZLE, M ;

BOROFFKA, H .

SOLID-STATE ELECTRONICS, 1977, 20 (05) :459-&

[9]

Stolte C. A., 1975, 1975 International Electron Devices Meeting. (Technical digest), P585, DOI 10.1109/IEDM.1975.188953

[10]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

← 1 →