LOW-RESISTIVITY N-TYPE LAYERS IN INASXP1-X BY ION-IMPLANTATION

被引：5

作者：

DAVIES, DE ^{[1
]}

KENNEDY, JK ^{[1
]}

LOWE, LF ^{[1
]}

机构：

[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01731

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 19期

关键词：

D O I：

10.1049/el:19750355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：462 / 463

页数：2

相关论文

共 10 条

[1] BARRERA JS, TO BE PUBLISHED
[2] COMPENSATION FROM IMPLANTATION IN GAAS
DAVIES, DE
KENNEDY, JK
YANG, AC
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (11) : 615 - 616
[3] DAVIES DE, 1975, P INT C APPLICATION
[4] EISEN F, 1974, 4TH P INT C ION IMPL
[5] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES
FAWCETT, W
HILSUM, C
REES, HD
[J]. ELECTRONICS LETTERS, 1969, 5 (14) : 313 - &
[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[7] ION-IMPLANTED N+ CONTACTS FOR KA BAND GAAS GUNN-EFFECT DIODES
LEE, DH
BERENZ, JJ
BERNICK, RL
[J]. ELECTRONICS LETTERS, 1975, 11 (09) : 189 - 191
[8] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LPE FROM SN SOLUTIONS
SHAY, JL
BACHMANN, KJ
BUEHLER, E
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (04) : 192 - 194
[9] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL INAS1-XPX USING ARSINE AND PHOSPHINE
TIETJEN, JJ
MARUSKA, HP
CLOUGH, RB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 492 - &
[10] INDIUM-PHOSPHIDE .3. DOUBLE EPITAXY LIGHT EMITTING DIODES WITH 1.5 PERCENT EFFICIENCY AT 300 DEGREES K
WILLIAMS, EW
PORTEOUS, P
ASTLES, MG
DEAN, PJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1757 - 1760