OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

被引：116

作者：

GYULAI, J

MAYER, JW

MITCHELL, IV

RODRIGUEZ, V

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 08期

关键词：

D O I：

10.1063/1.1653422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：332 / +

页数：1

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ARTHUR, JR
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[5] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON
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[8] DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING
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[J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 102 - +