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INDIUM-PHOSPHIDE .3. DOUBLE EPITAXY LIGHT EMITTING DIODES WITH 1.5 PERCENT EFFICIENCY AT 300 DEGREES K
被引:9
作者
:
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
WILLIAMS, EW
[
1
]
PORTEOUS, P
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
PORTEOUS, P
[
1
]
ASTLES, MG
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ASTLES, MG
[
1
]
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
[
1
]
机构
:
[1]
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1973年
/ 120卷
/ 12期
关键词
:
D O I
:
10.1149/1.2403358
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1757 / 1760
页数:4
相关论文
共 6 条
[1]
INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ASTLES, MG
SMITH, FGH
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
SMITH, FGH
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
WILLIAMS, EW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(12)
: 1750
-
1757
[2]
EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY
BLOM, GM
论文数:
0
引用数:
0
h-index:
0
BLOM, GM
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(09)
: 373
-
&
[3]
GALGINAITIS SV, 1970, 70C298 GE REP
[4]
HALL R, 1972, SEP COL C GAAS REL C, P177
[5]
KINETICS AND EFFICIENCY OF INFRARED-TO-VISIBLE CONVERSION IN LAF3 - YB,ER
KINGSLEY, JD
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
KINGSLEY, JD
FENNER, GE
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
FENNER, GE
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
GALGINAITIS, SV
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(04)
: 115
-
+
[6]
ELECTROLUMINESCENCE CHARACTERISTICS AND EFFICIENCY OF GAAS-SI DIODES
LADANY, I
论文数:
0
引用数:
0
h-index:
0
LADANY, I
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(02)
: 654
-
&
←
1
→
共 6 条
[1]
INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ASTLES, MG
SMITH, FGH
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
SMITH, FGH
WILLIAMS, EW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTABL,MALVERN,WORCESTERSHIRE,ENGLAND
WILLIAMS, EW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(12)
: 1750
-
1757
[2]
EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY
BLOM, GM
论文数:
0
引用数:
0
h-index:
0
BLOM, GM
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(09)
: 373
-
&
[3]
GALGINAITIS SV, 1970, 70C298 GE REP
[4]
HALL R, 1972, SEP COL C GAAS REL C, P177
[5]
KINETICS AND EFFICIENCY OF INFRARED-TO-VISIBLE CONVERSION IN LAF3 - YB,ER
KINGSLEY, JD
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
KINGSLEY, JD
FENNER, GE
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
FENNER, GE
GALGINAITIS, SV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady
GALGINAITIS, SV
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(04)
: 115
-
+
[6]
ELECTROLUMINESCENCE CHARACTERISTICS AND EFFICIENCY OF GAAS-SI DIODES
LADANY, I
论文数:
0
引用数:
0
h-index:
0
LADANY, I
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(02)
: 654
-
&
←
1
→