ELECTROLUMINESCENCE CHARACTERISTICS AND EFFICIENCY OF GAAS-SI DIODES

被引：43

作者：

LADANY, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.1660075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：654 / &

共 14 条

[1]

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[5]

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[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

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[10] GALLIUM PHOSPHIDE DOUBLE-EPITAXIAL DIODES [J].

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