ION-IMPLANTED N+ CONTACTS FOR KA BAND GAAS GUNN-EFFECT DIODES

被引：9

作者：

LEE, DH ^{[1
]}

BERENZ, JJ ^{[1
]}

BERNICK, RL ^{[1
]}

机构：

[1] HUGHES RES LABS,3011 MALIBU CANYON RD,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1049/el:19750145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：189 / 191

页数：3

共 10 条

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JONES, EL
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4623 - +
[3] HILSUM C, 1972, 4TH P INT S GAAS REL
[4] PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS
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MARSH, OJ
MEAD, CA
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (09) : 295 - +
[5] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS
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HIRSCH, N
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 349 - 353
[6] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153
[7] NARAYAN SY, 1972, RCA REV, V33, P752
[8] HIGH-FREQUENCY GUNN OSCILLATORS
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[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (02) : 142 - 144
[9] SEIDEL TE, 1969, T METALL SOC AIME, V245, P491
[10] Young A. B. Y., 1970, Journal of the Physics and Chemistry of Solids, V31, P517, DOI 10.1016/0022-3697(70)90092-2