ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS

被引：28

作者：

HUNSPERGER, RG ^{[1
]}

HIRSCH, N ^{[1
]}

机构：

[1] HUGHES RES LABS,3011 MALIBU CANYON RD,MALIBU,CA 90265

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 04期

关键词：

D O I：

10.1016/0038-1101(75)90090-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 353

页数：5

共 15 条

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DAETWYLE.K ;

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ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[2]

BAECHTOLD W, 1973, IEEE J SOLID STATE C, VSC 8, P54

[3] SUBMICRON EPITAXIAL FILMS FOR GAAS FIELD-EFFECT TRANSISTORS [J].

FAIRMAN, RD ;

SOLOMON, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) :541-544

[4]

Harris J. S., 1971, ION IMPLANTATION SEM, P157

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[6]

Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[7] MG AND BE ION IMPLANTED GAAS [J].

HUNSPERGER, RG ;

JAMBA, DM ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+

[8]

HUNSPERGER RG, 1973, ELECTRON LETT, V9, P1

[9]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[10]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

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