SUBMICRON EPITAXIAL FILMS FOR GAAS FIELD-EFFECT TRANSISTORS

[1] ARAKI H, 1970, ELECTRICAL COMMUN LA, V18, P608

[2] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[3] CAIRNS BR, PRIVATE COMMUNICATIO

[4] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[5] HOOPER WW, 1971, OCT INT EL DEV M WAS

[6] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[7] KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) : 117 - &

[8] WOLFE CM, 1970, GALLIUM ARSENIDE REL, P3

[9] WOLFE CM, 1968, S GALLIUM ARSENIDE, P43

[1] ARAKI H, 1970, ELECTRICAL COMMUN LA, V18, P608

[2] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[3] CAIRNS BR, PRIVATE COMMUNICATIO

[4] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[5] HOOPER WW, 1971, OCT INT EL DEV M WAS

[6] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[7] KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) : 117 - &

[8] WOLFE CM, 1970, GALLIUM ARSENIDE REL, P3

[9] WOLFE CM, 1968, S GALLIUM ARSENIDE, P43