INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS

被引：82

作者：

HARRIS, JS

MAYER, JW

EISEN, FH

HASKELL, JD

WELCH, B

PASHLEY, RD

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 12期

关键词：

D O I：

10.1063/1.1654271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：601 / &

共 10 条

[1] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[2] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[3]

Harris J. S., 1971, ION IMPLANTATION SEM, P157

[4] LATTICE DISORDER PRODUCED IN SI BY 40-KEV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR [J].

HART, RR ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :206-&

[5] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

HUNSPERG.RG ;

MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

[6]

HUNSPERGER RG, 1970, RADIATION EFFECTS, V6, P236

[7]

Mayer J. W., 1970, ION IMPLANTATION SEM

[8]

Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[9]

Whitton J. L., 1971, Radiation Effects, V9, P127, DOI 10.1080/00337577108242044

[10]

WILLIAMS EW, 1967, T METALL SOC AIME, V239, P387

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