ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE

被引：30

作者：

HUNSPERG.RG

MARSH, OJ

机构：

来源：

关键词：

D O I：

10.1149/1.2411914

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：488 / &

共 19 条

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[5] DUNLAP H, 1968, NAS12124 CONTR
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WOLFSTIR.KB
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[8] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT
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[9] GOLDSTEIN B, 1962, COMPOUND SEMICONDUCT, V1, P347
[10] ITOH T, TO BE PUBLISHED