COMPENSATION FROM IMPLANTATION IN GAAS

被引：27

作者：

DAVIES, DE ^{[1
]}

KENNEDY, JK ^{[1
]}

YANG, AC ^{[1
]}

机构：

[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730

来源：

关键词：

D O I：

10.1063/1.1654767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 616

页数：2

共 15 条

[1] RADIATION EFFECTS IN GAAS
AUKERMAN, LW
GRAFT, RD
DAVIS, PW
SHILLIDAY, TS
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +
[2] NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS
BORDERS, JA
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 16 - &
[3] CARTER G, 1971, ION IMPLANTATION
[4] DAVIES DE, 1971, 11 P INT C ION IMPL, P23
[5] DAVIES DT, UNPUBLISHED
[6] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION
DYMENT, JC
NORTH, JC
MILLER, BI
RIPPER, JE
DASARO, LA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
[7] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
LINDLEY, WT
WOLFE, CM
DONNELLY, JP
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[8] HARRIS JS, 1971, ION IMPLANTATION
[9] ROOSILD S, 1969, IEEE T NUCL SCI, VNS16, P33
[10] EFFECT OF ION-IMPLANTATION DAMAGE ON OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE
SHIFRIN, GA
HUNSPERGER, RG
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 274 - +