NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS

[1] ARNOLD GW, TO BE PUBLISHED

[2] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[3] BRICE DK, PRIVATE COMMUNICATIO

[4] HARRIS J, TO BE PUBLISHED

[5] Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[6] MITCHELL EW, 1966, J PHYS SOC JPN, VS 21, P292

[7] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 689 - &

[8] EFFECTS OF NEUTRON IRRADIATION ON OPTICAL PROPERTIES OF THIN FILMS AND BULK GAAS AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 697 - &

[9] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5300 - +

[10] DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 328 - &

[1] ARNOLD GW, TO BE PUBLISHED

[2] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[3] BRICE DK, PRIVATE COMMUNICATIO

[4] HARRIS J, TO BE PUBLISHED

[5] Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[6] MITCHELL EW, 1966, J PHYS SOC JPN, VS 21, P292

[7] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 689 - &

[8] EFFECTS OF NEUTRON IRRADIATION ON OPTICAL PROPERTIES OF THIN FILMS AND BULK GAAS AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 697 - &

[9] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5300 - +

[10] DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 328 - &