DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION

The production of divacancies in Si by 400-keV oxygen ion implantation (I = 1.75 × 1014 cm-2, two sides) was detected by the characteristic divacancy optical absorption band at 1.8 μ. This band has been previously correlated with the presence of divacancies in electron- and neutron-irradiated silicon. Ion-produced divacancy annealing near 200°C was observed to correlate with neutron-produced divacancy annealing. Detailed comparisons of the annealing of electron-, neutron-, and ion-produced divacancies suggest that the ion-produced divacancies anneal primarily in regions with sink concentrations ≥ 1019 cm-3. © 1969 The American Institute of Physics.