1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY

被引：294

作者：

CHENG, LJ

CORELLI, JC

CORBETT, JW

WATKINS, GD

机构：

来源：

PHYSICAL REVIEW | 1966年 / 152卷 / 02期

关键词：

D O I：

10.1103/PhysRev.152.761

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：761 / +

页数：1

共 35 条

[1] INTERACTION DU CHAMP DE RAYONNEMENT AVEC LES VIBRATIONS DE RESEAU AUX POINTS CRITIQUES DE LA ZONE DE BRILLOUIN DU SILICIUM [J].

BALKANSKI, M ;

NUSIMOVICI, M .

PHYSICA STATUS SOLIDI, 1964, 5 (03) :635-647

[2]

BECKER M, 1952, PHYS REV, V85, P730

[3] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[4] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G ;

WRIGHT, K ;

SZYMANSKI, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :1-&

[5] INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J].

COLLINS, RJ ;

FAN, HY .

PHYSICAL REVIEW, 1954, 93 (04) :674-678

[6] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

PHYSICAL REVIEW, 1964, 135 (5A) :1381-+

[7] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[8] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[9] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J].

CORELLI, JC ;

OEHLER, G ;

BECKER, JF ;

EISENTRA.KJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1787-&

[10]

DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

← 1 2 3 4 →