ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON

被引：22

作者：

CORELLI, JC

OEHLER, G

BECKER, JF

EISENTRA.KJ

机构：

来源：

关键词：

D O I：

10.1063/1.1703129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1787 / &

共 8 条

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[4] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

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[5]

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