LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES

被引：31

作者：

DONNELLY, JP ^{[1
]}

BOZLER, CO ^{[1
]}

LINDLEY, WT ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1016/0038-1101(77)90198-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / 276

页数：4

共 12 条

[1] HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES
BOZLER, CO
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LATON, RW
SUDBURY, RW
LINDLEY, WT
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 123 - 125
[2] IMPURITY GETTERING IN SEMI-INSULATING GALLIUM-ARSENIDE USING ION-IMPLANTATION DAMAGE
BOZLER, CO
DONNELLY, JP
LINDLEY, WT
REYNOLDS, RA
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 698 - 699
[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43
[4] EISEN FH, 1976, APPLICATIONS ION BEA, P44
[5] HIGGINS JA, 1976, ELECTRON LETT, V12, P18
[6] HIGGINS JA, TO BE PUBLISHED
[7] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS
HUNSPERGER, RG
HIRSCH, N
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 349 - 353
[8] KELLER W, 1975, 1975 INT EL DEV M TE, P187
[9] Ladd G. O. Jr., 1976, 1976 IEEE International Solid-State Circuits Conference. (Digest of technical papers)
[10] MIZUNTANI T, 1975, ELECTRON LETT, V11, P639