IMPURITY GETTERING IN SEMI-INSULATING GALLIUM-ARSENIDE USING ION-IMPLANTATION DAMAGE

被引：16

作者：

BOZLER, CO

DONNELLY, JP

LINDLEY, WT

REYNOLDS, RA

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] ADV RES PROJ AGCY,MAT SCI OFFICE,ARLINGTON,VA 22209

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 11期

关键词：

D O I：

10.1063/1.88930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：698 / 699

页数：2

共 7 条

[1] HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES [J].

BOZLER, CO ;

DONNELLY, JP ;

MURPHY, RA ;

LATON, RW ;

SUDBURY, RW ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :123-125

[2]

BOZLER CO, UNPUBLISHED

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[4]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[6]

Lindhard J, 1963, SELSK MAT FYS MEDD, V33, P1

[7]

SEIDEL TE, 1973, 3RD P INT C ION IMPL, P305

← 1 →