ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET

被引：30

作者：

HSIEH, CM

MATHEWS, JR

SEIDEL, HD

PICKAR, KA

DRUM, CM

机构：

[1] BELL TEL LABS, READING, PA 19604 USA

[2] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

[3] BELL TEL LABS, ALLENTOWN, PA 18103 USA

来源：

关键词：

D O I：

10.1063/1.1654624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：238 / 240

页数：3

共 9 条

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PICKAR, KA
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[2] BUCK TM, 1968, BELL SYST TECH J, V47, P1927
[3] CROWELL MH, 1967, 1967 INT SOL STAT CI, P128
[4] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION
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[J]. REPORTS ON PROGRESS IN PHYSICS, 1955, 18 : 1 - 51
[5] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON
KOCK, AJRD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &
[6] MASTERS BJ, 1971, ION IMPLANTATION, P81
[7] MAYER JW, 1970, ION IMPLANTATION SEM, P100
[8] POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS
METS, EJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 420 - &
[9] THOMSEN PV, 1970, ION IMPLANTATION SEM, P68