VACANCY CLUSTERS IN DISLOCATION-FREE SILICON

[1] BAKER JA, 1968, FAL MONTR M EL SOC

[2] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[3] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[4] GROSS C, 1969, 1 INT S SIL MAT SCIE

[5] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[6] LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484

[7] PLASKETT TS, 1965, T METALL SOC AIME, V233, P809

[8] SIRTL E, 1961, Z METALLKD, V52, P529

[9] WATKINS GD, 1967 S RAD EFF SEM C

[10] [No title captured]

[1] BAKER JA, 1968, FAL MONTR M EL SOC

[2] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[3] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[4] GROSS C, 1969, 1 INT S SIL MAT SCIE

[5] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[6] LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484

[7] PLASKETT TS, 1965, T METALL SOC AIME, V233, P809

[8] SIRTL E, 1961, Z METALLKD, V52, P529

[9] WATKINS GD, 1967 S RAD EFF SEM C

[10] [No title captured]