GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS

被引：337

作者：

DASH, WC

机构：

来源：

关键词：

D O I：

10.1063/1.1702390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：459 / 474

页数：16

共 28 条

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[2]

Bardeen J., 1952, IMPERFECTIONS NEARLY, P261

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[4]

BORMANN, 1958, Z NATURFORSCH A, V13, P423

[5]

BURTON, 1951, PHILOS T R SOC A, V243, P299

[6]

Dash W. C., 1957, DISLOCATIONS MECH PR, pp. 57

[7] GENERATION OF PRISMATIC DISLOCATION LOOPS IN SILICON CRYSTALS [J].

DASH, WC .

[8] SILICON CRYSTALS FREE OF DISLOCATIONS [J].

DASH, WC .

[9] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

[10] DISTORTED LAYERS IN SILICON PRODUCED BY GRINDING AND POLISHING [J].

DASH, WC .