GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON

被引：66

作者：

BUCK, TM

HSIEH, CM

POATE, JM

PICKAR, KA

机构：

来源：

关键词：

D O I：

10.1063/1.1654228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / &

共 15 条

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