GETTERING OF GOLD AND COPPER FROM SILICON

被引：32

作者：

LAMBERT, JL

REESE, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 11期

关键词：

D O I：

10.1016/0038-1101(68)90127-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1055 / &

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共 17 条

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[3] FRANZ I, 1966, TELEFUNKEN ZTG, V39, P365
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ING, SW
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537
[8] DISTRIBUTION AND PRECIPITATION OF GOLD IN PHOSPHORUS-DIFFUSED SILICON
JOSHI, ML
DASH, S
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2453 - &
[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381
[10] GETTERING OF IRON FROM SILICON
LAMBERT, JL
ROY, K
REESE, M
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 877 - &