FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON

被引：102

作者：

KOOI, E

机构：

来源：

关键词：

D O I：

10.1149/1.2426010

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1383 / 1381

页数：3

共 11 条

[1] ABRIKOSOV NK, 1962, RUSS J INORG CHEM, V7, P429
[2] EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON
ALLEN, RB
BERNSTEIN, H
KURTZ, AD
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 334 - 337
[3] A TECHNIQUE FOR RESOLUTION OF COMPLEX GAMMA SPECTRA USING A SINGLE-CHANNEL GAMMA-RAY SPECTROMETER
ELLEMAN, TS
SUNDERMAN, DN
HOWES, JE
[J]. INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1961, 12 (1-2): : 142 - &
[4] GIESSEN B, 1959, Z METALLKD, V5, P174
[5] GOETZBERGER R, 1960, J APPL PHYS, V31, P1821
[6] DIFFUSION OF PHOSPHORUS INTO SILICON
MAEKAWA, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &
[7] DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
SELLO, H
TREMERE, DA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 288 - 298
[8] SUBASHIEV VK, 1961, SOV PHYS-SOL STATE, V2, P2406
[9] TANNENBAUM E, 1961, SOL STATE ELECTRON, V2, P12
[10] THE SYSTEM SIO2-P2O5
TIEN, TY
HUMMEL, FA
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1962, 45 (09) : 422 - 424