DIFFUSION OF PHOSPHORUS INTO SILICON

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[3] HANNAY NB, SEMICONDUCTORS, P331

[4] THE DIFFUSION OF PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) : 392 - 401

[5] MAEKAWA S, 1961, PHYS SOC JAPAN

[6] FIELD-ENHANCED DONOR DIFFUSION IN DEGENERATE SEMICONDUCTOR LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1402 - &

[7] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1049 - 1061

[8] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[3] HANNAY NB, SEMICONDUCTORS, P331

[4] THE DIFFUSION OF PHOSPHORUS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) : 392 - 401

[5] MAEKAWA S, 1961, PHYS SOC JAPAN

[6] FIELD-ENHANCED DONOR DIFFUSION IN DEGENERATE SEMICONDUCTOR LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1402 - &

[7] FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1049 - 1061

[8] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132