DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] BARRER RM, 1951, DIFFUSION SOLIDS, P126

[3] Crank J, 1956, MATH DIFFUSION, P347

[4] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) : 1064 - 1067

[5] FORSCH CJ, 1957, J ELECTROCHEM SOC, V104, P547

[6] THE HIGH TEMPERATURE OXIDATION OF SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1957, 61 (09) : 1200 - 1205

[7] LIGENZA JR, UNPUB BELL TELEPHONE

[8] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[2] BARRER RM, 1951, DIFFUSION SOLIDS, P126

[3] Crank J, 1956, MATH DIFFUSION, P347

[4] KINETICS OF THE OXIDATION AND NITRIDATION OF SILICON AT HIGH TEMPERATURES [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) : 1064 - 1067

[5] FORSCH CJ, 1957, J ELECTROCHEM SOC, V104, P547

[6] THE HIGH TEMPERATURE OXIDATION OF SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1957, 61 (09) : 1200 - 1205

[7] LIGENZA JR, UNPUB BELL TELEPHONE

[8] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427