EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON

被引：31

作者：

ALLEN, RB

BERNSTEIN, H

KURTZ, AD

机构：

来源：

关键词：

D O I：

10.1063/1.1735568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / 337

页数：4

共 8 条

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[3] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P318
[4] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
FROSCH, CJ
DERICK, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) : 547 - 552
[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[6] Nomura K., COMMUNICATION
[7] SAH, 1959, B AM PHYS SOC 2, V4, P157
[8] MEASUREMENT OF SHEET RESISTIVITIES WITH THE 4-POINT PROBE
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 711 - 718