PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES

[1] ADAMIC JW, 1964, OCT WASH M EL SOC

[2] ARMSTRONG WT, TO BE PUBLISHED

[3] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[4] DONOVAN RP, 1963, OCT NEW YORK M EL SO

[5] DUFFY MC, 1965, MAY SAN FRANC M EL S

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[8] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381

[10] NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2712 - &

[1] ADAMIC JW, 1964, OCT WASH M EL SOC

[2] ARMSTRONG WT, TO BE PUBLISHED

[3] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[4] DONOVAN RP, 1963, OCT NEW YORK M EL SO

[5] DUFFY MC, 1965, MAY SAN FRANC M EL S

[6] GOLD AS A RECOMBINATION CENTRE IN SILICON [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 685 - +

[7] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[8] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &

[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381

[10] NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2712 - &