GOLD AS A RECOMBINATION CENTRE IN SILICON

被引：111

作者：

FAIRFIELD, JM

GOKHALE, BV

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90036-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：685 / +

页数：1

共 10 条

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[2] RECOMBINATION PROPERTIES OF GOLD IN SILICON
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[3] PROPERTIES OF GOLD-DOPED SILICON
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[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
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[5] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS
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[6] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS
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[7] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR
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[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
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[9] SPROKEL GJ, 1964, MAY SPRING M EL SOC
[10] MECHANISM OF GOLD DIFFUSION INTO SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 240 - &