PROPERTIES OF GOLD IN SILICON

[1] ADAMIC JW, 1963, SEP NEW YORK M EL SO

[2] ADAMIC JW, 1964, OCT WASH M EL SOC

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[4] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104

[5] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[6] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[7] DETERMINATION OF INTRINSIC DENSITY OF SILICON BELOW TEMPERATURE OF INTRINSIC CONDUCTION FROM ELECTRIC MEASUREMENTS ON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 189 - &

[8] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[9] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P118

[10] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P346

[1] ADAMIC JW, 1963, SEP NEW YORK M EL SO

[2] ADAMIC JW, 1964, OCT WASH M EL SOC

[3] ATALLA MM, 1960, PROPERTIES ELEMENTAL, V5, P163

[4] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104

[5] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518

[6] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[7] DETERMINATION OF INTRINSIC DENSITY OF SILICON BELOW TEMPERATURE OF INTRINSIC CONDUCTION FROM ELECTRIC MEASUREMENTS ON TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 189 - &

[8] JUNCTION POTENTIAL STUDIES IN TUNNEL DIODES [J]. PHYSICAL REVIEW, 1963, 131 (02): : 627 - &

[9] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P118

[10] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P346