共 60 条
- [32] JOST W, 1952, DIFFUSION SOLIDS LIQ, P37
- [33] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834
- [35] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254
- [36] MARTON L, 1955, ADVANCES ELECTRON ED, P156
- [38] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
- [39] EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .2. GOLD IN SILICON [J]. PHYSICAL REVIEW, 1962, 128 (01): : 38 - &
- [40] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636