DRIFT AND CONDUCTIVITY MOBILITY IN SILICON

[1] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[2] THE TEMPERATURE DEPENDENCE OF DRIFT MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 89 (06): : 1295 - 1295

[3] MORIN RJ, 1954, PHYS REV, V96, P29

[4] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[5] EXPERIMENTAL CONFIRMATION OF RELATION BETWEEN PULSE DRIFT MOBILITY AND CHARGE CARRIER DRIFT MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (02): : 271 - 272

[6] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1953, 91 (02): : 282 - 289

[7] WATTERS RL, UNPUBLISHED

[1] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[2] THE TEMPERATURE DEPENDENCE OF DRIFT MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 89 (06): : 1295 - 1295

[3] MORIN RJ, 1954, PHYS REV, V96, P29

[4] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[5] EXPERIMENTAL CONFIRMATION OF RELATION BETWEEN PULSE DRIFT MOBILITY AND CHARGE CARRIER DRIFT MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (02): : 271 - 272

[6] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1953, 91 (02): : 282 - 289

[7] WATTERS RL, UNPUBLISHED