GOLD IN SILICON

被引：28

作者：

BEMSKI, G

STRUTHERS, JD

机构：

来源：

关键词：

D O I：

10.1149/1.2428670

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：588 / 591

页数：4

共 9 条

[1]

BAKER AN, 1957, JUL IRE AIEE SEM DEV

[2]

BEMSKI G, UNPUBLISHED

[3] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[4]

KINGSTON RH, 1954, P IRE, V42, P849

[5]

SILVERMAN SJ, 1958, J ELECTROCHEM SOC, V105, P591

[6] SOLUBILITY AND DIFFUSIVITY OF GOLD, IRON, AND COPPER IN SILICON [J].

STRUTHERS, JD .

[7] HEAT TREATMENT OF SILICON USING ZONE HEATING TECHNIQUES [J].

THEUERER, HC ;

WHELAN, JM ;

BRIDGERS, HE ;

BUEHLER, E .

THURMOND, CD ;

LOGAN, RA .

[9]

THURMOND CD, COMMUNICATION