POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS

被引：43

作者：

METS, EJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 04期

关键词：

D O I：

10.1149/1.2423560

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：420 / &

共 10 条

[1] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[2] GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2275-2283

[3] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[4] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[6] DIFFUSION OF OXYGEN IN SILICON [J].

LOGAN, RA ;

PETERS, AJ .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1627-1630

[7]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[8]

QUIESSER HJ, 1961, J APPL PHYS, V32, P1776

[9] STUDY OF COPPER PRECIPITATION BEHAVIOR IN SILICON SINGLE CRYSTALS [J].

SCHWUTTKE, GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (02) :163-167

[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

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