SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC

被引：79

作者：

DONNELLY, JP ^{[1
]}

LINDLEY, WT ^{[1
]}

HURWITZ, CE ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1063/1.88260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：41 / 43

页数：3

共 15 条

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[4] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
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[5] HARRIS JS, 1971, 2ND P INT C ION IMPL, P157
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[7] MG AND BE ION IMPLANTED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1318 - +
[8] JOHNSON WS, 1970, PROJECTED RANGE STAT
[9] ZN AND TE IMPLANTATIONS INTO GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1975 - +
[10] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306