HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES

被引：36

作者：

BOZLER, CO ^{[1
]}

DONNELLY, JP ^{[1
]}

MURPHY, RA ^{[1
]}

LATON, RW ^{[1
]}

SUDBURY, RW ^{[1
]}

LINDLEY, WT ^{[1
]}

机构：

[1] MIT LINCOLN LAB,LEXINGTON,MA 02173

来源：

关键词：

D O I：

10.1063/1.88965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：123 / 125

页数：3

共 8 条

[1] CW OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES
BERENZ, JJ
YING, RS
LEE, DH
[J]. ELECTRONICS LETTERS, 1974, 10 (09) : 157 - 158
[2] BIERIG RW, 1975, 5TH P BIENN CORN EL, P33
[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
DONNELLY, JP
LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43
[4] HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT DEVICES BY LIQUID-PHASE EPITAXY FOR X-BAND
GOLDWASSER, RE
ROSZTOCZY, FE
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 92 - 94
[5] IRVIN JC, 1973, 4TH P BIENN CORN EL, P287
[6] JOHNSON WS, 1970, PROJECTED RANGE STAT
[7] KIM CK, 1973, 4TH P BIENN CORN EL, P299
[8] Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1