CW OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES

被引:11
作者
BERENZ, JJ [1 ]
YING, RS [1 ]
LEE, DH [1 ]
机构
[1] HUGHES RES LABS,3100 W LOMITA BLVD,TORRANCE,CA 90509
关键词
D O I
10.1049/el:19740119
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:157 / 158
页数:2
相关论文
共 6 条
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    HUNSPERGER, RG
    HIRSCH, N
    [J]. ELECTRONICS LETTERS, 1973, 9 (25) : 577 - 578
  • [3] HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORS
    KIM, C
    STEELE, R
    BIERIG, R
    [J]. ELECTRONICS LETTERS, 1973, 9 (8-9) : 173 - 174
  • [4] COMPUTER STUDY ON GAAS SCHOTTKY-BARRIER IMPATT DIODES
    NAKAMURA, M
    KODERA, H
    MIGITAKA, M
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 663 - 667
  • [5] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY
    SALMER, G
    PRIBETICH, J
    FARRAYRE, A
    KRAMER, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 314 - 324
  • [6] SU S, 1973, IEEE T ELECTRON DEVI, VED20, P541