UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION

被引：34

作者：

DONNELLY, JP ^{[1
]}

LEONBERGER, FJ ^{[1
]}

BOZLER, CO ^{[1
]}

机构：

[1] MIT LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 12期

关键词：

D O I：

10.1063/1.88644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：706 / 708

页数：3

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